Samsung Electronics, the global leader in advanced memory technology, has announced the development of the world’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM chip using 12 nanometer (nm)-class process technology. This breakthrough will enable the production of high-capacity memory modules for various applications in the era of artificial intelligence (AI) and big data.
Samsung’s 32Gb DDR5 DRAM: A Game-Changer for Memory Technology
Samsung’s new 32Gb DDR5 DRAM chip is the result of cutting-edge processes and technologies that increase integration density and design optimization. The chip boasts the industry’s highest capacity for a single DRAM chip and offers double the capacity of 16Gb DDR5 DRAM in the same package size.
This means that Samsung can now produce 128GB DDR5 modules without using the Through Silicon Via (TSV) process, which was previously required for such high-capacity modules. The TSV process involves stacking multiple chips vertically and connecting them with microscopic wires, which increases complexity and cost.
By eliminating the need for the TSV process, Samsung can greatly simplify the production of high-capacity memory modules and reduce power consumption by approximately 10% compared to 128GB modules with 16Gb DRAM. This makes the new product the optimal solution for enterprises that emphasize power efficiency, such as data centers.
Samsung’s 32Gb DDR5 DRAM: A Key Enabler for AI and Big Data Applications
Samsung’s new 32Gb DDR5 DRAM chip also paves the way for memory modules of up to 1-terabyte (TB) capacity, which will be in high demand for AI and big data applications. By using 40 8-Hi 3DS memory stacks comprised of 32Gb dies, Samsung can build 1TB memory modules for AI and database servers, which will sell like hotcakes given the generative AI frenzy.
With such unprecedented memory capacity, Samsung will be able to support various applications that require massive amounts of data processing and analysis, such as natural language processing, computer vision, machine learning, deep learning, and more. These applications are expected to grow exponentially in the coming years as more industries adopt AI and big data solutions.
Samsung plans to start mass production of its 32Gb DDR5 DRAM by the end of the year, so expect actual modules featuring these DRAMs to arrive late in 2023 or early in 2024. As far as high-end 512GB and 1TB memory modules are concerned, they will debut after they are validated by platform vendors (e.g., AMD, Ampere, Intel, etc.) and then qualified by actual server makers.
Samsung’s 32Gb DDR5 DRAM: A Milestone in Memory History
Samsung has been leading the memory technology innovation for over four decades, since it developed its first 64-kilobit (Kb) DRAM in 1983. Since then, Samsung has enhanced its DRAM capacity by a factor of 500,000, breaking the boundaries of memory technology.
Samsung’s new 32Gb DDR5 DRAM chip is a milestone in memory history, as it marks the first time that a single DRAM chip can store up to 4GB of data. This is equivalent to storing about 1,000 high-resolution photos or more than two hours of HD video on a single chip.
With its new product, Samsung has solidified its leadership in next-generation DRAM technology and signaled the next chapter of high-capacity memory. Samsung will continue to develop DRAM solutions through differentiated process and design technologies to meet the current and future demands of the computing and IT industry.
